Daniel Araújo Gay
- Full Professor
Deparment of Materials Science And Engineering
Expertise: TEM- Related Techniques, Diamond for high power devices, Aerospace materials, Structural and functional characterization.
- Scientific Carrer
- Publications
- Projects
- Theses Directed
- CV
Prof. Daniel ARAUJO is Dr. in Science and physicist of the EPFL Switzerland, (PhD in 1992). Nowadays, he is Full Professor at University of Cadiz (Spain, since 2010) in the Department of Material Science and Engineering and at the Lyon Institute of Technology (INSA-Lyon, France, since 2004, presently in détachement). His activity is actually focused on two different topics: (i) aerospace materials in collaboration with Airbus and FIDAMC (Foundation for Research, Development and Application of Composite Materials), (ii) Homoepitaxial diamond for power devices. In the latter, he is responsible of H2020 and national projects. He has been supervisor of 11 doctoral theses and is author of more than 140 JCR publications and 16 invited/plenary conferences.
His career can be divided in five research topics/periods with some overlaps as shown in the figure:
- Metallurgy
- III-V semiconductors
- Aerospace materials
- Diamond and WBG (wide bandgap) materials
- Diamond+CFRP (mix of III+IV)
The wide of each form represent the dedication to each topic and the bold letters indicate the institution where the investigation was achieved.
Topic I: Metallurgy (UNIL, NESTEC, 1986-88)
In 1986, he begins his Master Thesis at the University of Lausanne (UNIL) designing a new furnace to evaluate liquid transition metals (up to 2000ºC), sound velocity and density (ultra sounds and g-ray absorption respectively). During the time of design and workshop machining, he spends one year in NESTEC Investigation Center (NESTLÉ) developing an holography-interferometry system to evaluate strain in metallic drawing of splinters in Nestlé milks cans. After this year, he performs the experimental work at UNIL deducing the effect of the magnetic momentum on the liquid metal compressibility where magnetic interaction affects mechanical properties of Fe-Ni and Fe-Al alloys between 700-2000ºC.
Acquired competences, results and learnings: Become well-versed in workshop behaviors, industrial research work behavior and interests, metallurgy, vacuum and optics set-ups insides.
Topic II: III-V semiconductors (EPFL, IBM, UCA, 1989-2000)
In 1989, he begin his PhD thesis at the Swiss Institute of Technology of Lausanne (EPFL, Switzerland) designing a cathodoluminescence (CL) set-up (He temperature) and carrying out studies on GaAs/AlGaAs quantum well structures (optical activity of defects, carrier transport, local confinement photon emission, …). After his PhD, he spends 6months at IBM Research Center (Rüschlikon, Zürich, Switzerland) to adapt the CL optical set-up to their STM (scanning tunneling microscopy) to evaluate the very local carrier injection and photon emission. Finally, in 1993, he joins the University of Cadiz (UCA, Spain) as postdoc of a European project (BLES, FP7), to design and evaluate buffer layers to control the lattice parameter straining between GaAs substrates and InGaAs active layer of 1.3-1.5µm optical devices. During this last period, he obtains an associate professor position in this University and directs his first PhD thesis (Manuel Jesús Flórez).
Acquired competences, results and learnings: Deepening in semiconductor physics and devices, use and drive of SEM, CL-EBIC, STM, TEM characterizations, use and drive semiconductor technology (clean rooms, ICP, …). During this period, he is the author of more than 50 publications and 1 PhD direction.
Topic III: Aerospace materials (UCA, 2001-2019)
In 2001, with the concern to encourage an investigation close to the local industry, he begins an activity on aerospace CFRP material machining using laser ablation. A first contract with Airbus Industrie (Puerto Real factory, Cadiz) is then followed in 2003, 2004 and 2005 by National project (Ministry grants) on the same activity. In 2004, he obtains a position of Full Professor at the Lyon Institute of Technology (INSA-Lyon) and occupying this new position during three years which required him to follow the aerospace material research activity direction in parallel from the distance to the UCA, which leads him to the direction of one PhD thesis in this field (Antonio García Fuentes, 2006)
At INSA-Lyon, he is the responsible of the electron microscopy facilities (CLYM) including machines from 5 investigation centers-universities (UCB, ENS, ECL, INSA, CNRS) and responsible of a regional platform of materials characterization (MULTI-D) which includes industrial entities, research centers and universities between Lyon-St Etienne and Grenoble.
In 2007, back to UCA, he initiates a new activity on the CFRP fracture (experimental and simulations, cohesive zone) in collaboration with Airbus and the INPG (Institut National Polytechnique de Grenoble, France) thanks to regional grants (Junta de Andalucía, proyectos de Excelencia, 2007-2010). This allows a second PhD direction in this field (Dery Torres Uriona, 2012). Up to now, some industrial contracts remain alive this activity but with a lower intensity respect to the 2003-2015 years. However, at the end of 2018, mixing topic III (aerospace materials) and IV (diamond): he develops the new ideas of diamond growth on carbon fiber, with the goal of manufacturing conductive CFRP aerospace material. Preliminary results were obtained thanks to a national grant (EXPLORA project, MINECO, 2018-2020) with a PhD direction (Josue Millán)
Acquired competences, results and learnings: Knowledge of aerospace materials and insides, use and drive of mechanical characterizations and FE simulation softwares (ABAQUS), during this period he is author of 10 publications and patents, 2 PhD directions and one in progress.
Topic IV: Diamond and WBG materials (UCA, Neel Institute, INSA-Lyon, 1999-2019)
At the end of topic II and then after in parallel to topic III, he switches from III-V to WBG materials building a reactor to carburize Si and grow 3C-SiC followed by TEM characterization. This activity is granted by a national project (1999-2002) being for the first time responsible of project. This allows him also to direct his second PhD thesis (Francisco Morales Sánchez, 2004). In 2003, he spends one year as invited professor at the Institut Néel (Grenoble, France) initiating an activity on Diamond materials and devices and following it then as Full Professor at the Lyon Institute of Technology (INSA-Lyon). In 2007, he rejoins the university of Cadiz going on his research in the field of diamond material for power devices and being responsible of 3 successive national projects and one H2020. Diamond based MOSFETs and SBD (Schottky barrier diodes) were developed and physical insides of such structures studied. This allows the direction of 4 PhD thesis between 2009-2017 (María de la Paz Alegre, Carlo Enzo Pastore, José Carlos Piñero, Fernando Lloret) some of them in co-tutela regime with the University of Grenoble-Alpes (France). Presently, 2 more PhDs are in progress (Gonzalo Alba, Beatriz Soto) in this field. The diamond activity is now tentatively projected towards the improve of aerospace materials proposed in the present proposal and with the beginning, this year, of a new industrial doctoral thesis (Josué Millán) in co-tutela regime with the FIDAMC.
Acquired competences, results and learnings: Deepening more in diamond-WBG semiconductor physics and devices, use and drive of STEM-EELS and STEM-HAADF characterizations, use and drive FIB-dual beam and TITAN-THEMIS TEM/STEM, grant proposal writing and project managing, more than 70 publications, 5 PhD direction and 2 in progress.
Topic V: Diamond and CFRP aerospace materials (UCA, 2018-…)
This is the theme of the present proposal. Preliminary studies growing diamond on individual carbon fiber are presently in progress to demonstrate viability of the idea. First results show that it is possible to grow heavily boron doped diamond on carbon fibers and improving its conductivity. The topic of the ERC project is to demonstrate the capability to industrialize such idea for the fabrication of aerospace structural elements. The projection of the idea is also to integrate active systems based on diamond semiconducting properties (energy harvesting, sensors, …) in aerospace structures without mechanical deterioration of the structural element.
Publications
- Subject Area
- Affiliations
- International
Documents by Subject Area
Documents by Collaboration
Documents by Territory
2020
1.-Lattice performance during initial steps of the smart-cut™ process in semiconducting diamond: a stem study
Piñero, J.C.; de Vecchy, J.; Fernández, D.; Alba, G.; Widiez, J.; Di Cioccio, L.; Lloret, F.; Araujo, D.; Pernot, J.;
Applied Surface Science, 528 (2020)
2.-Interfacial integrity enhancement of atomic layer deposited alumina on boron doped diamond by surface plasma functionalization
Jaggernauth, A.; Silva, R.M.; Neto, M.A.; Oliveira, F.J.; Bdikin, I.K.; Alegre, M.P.; Gutiérrez, M.; Araújo, D.; Mendes, J.C.; Silva, R.F.;
Surface and Coatings Technology, 397 (2020)
3.-Surface states of (100) o-terminated diamond: towards other 1 × 1:o reconstruction models
Alba, G.; Pilar Villar, M.; Alcántara, R.; Navas, J.; Araujo, D.;
Nanomaterials, 10 (6), 1-15 (2020)
4.-Analysis by hr-stem of the strain generation in inp after sin x deposition and icp etching
Gutiérrez, M.; Reyes, D.F.; Araujo, D.; Landesman, J.P.; Pargon, E.;
Journal of Electronic Materials (2020)
5.-Diamond/γ-alumina band offset determination by xps
Cañas, J.; Alba, G.; Leinen, D.; Lloret, F.; Gutierrez, M.; Eon, D.; Pernot, J.; Gheeraert, E.; Araujo, D.;
Applied Surface Science (2020)
6.-Study of early stages in the growth of boron-doped diamond on carbon fibers
Millán-Barba, J.; Gutiérrez, M.; Lloret, F.; de Villoria, R.G.; Alcántara, R.; Haenen, K.; Araujo, D.;
Physica Status Solidi (A) Applications and Materials Science (2020)
2019
7.-How to Grow Fully (100) Oriented SiC/Si/SiC/Si Multi-Stack
Yeghoyan T., Alassaad K., Soulière V., Ferro G., Gutierrez M., Araujo D.
Physica Status Solidi (A) Applications and Materials Science None None – (2019)
2018
8.-High resolution boron content profilometry at ?-doping epitaxial diamond interfaces by CTEM
Piñero J.C., Lloret F., Alegre M.P., Villar M.P., Fiori A., Bustarret E., Araújo D.
Applied Surface Science 461 None 221-226 (2018)
9.-Determination of alumina bandgap and dielectric functions of diamond MOS by STEM-VEELS
Cañas J., Piñero J.C., Lloret F., Gutierrez M., Pham T., Pernot J., Araujo D.
Applied Surface Science 461 None 93-97 (2018)
10.-Three-Dimensional Diamond MPCVD Growth over MESA Structures: A Geometric Model for Growth Sector Configuration
Lloret F., Araújo D., Eon D., Bustarret E.
Crystal Growth and Design 18 12 7628-7632 (2018)
11.-Calibration of a cohesive model for fracture in low cross-linked epoxy resins
Torres D., Guo S., Villar M.-P., Araujo D., Estevez R.
Polymers 10 12 – (2018)
12.-Crystalline defects induced during MPCVD lateral homoepitaxial diamond growth
Lloret F., Eon D., Bustarret E., Araujo D.
Nanomaterials 8 10 – (2018)
13.-GaSb and GaSb/AlSb Superlattice Buffer Layers for High-Quality Photodiodes Grown on Commercial GaAs and Si Substrates
Gutiérrez M., Lloret F., Jurczak P., Wu J., Liu H.Y., Araújo D.
Journal of Electronic Materials 47 9 5083-5086 (2018)
14.-Control of the alumina microstructure to reduce gate leaks in diamond MOSFETs
Gutiérrez M., Lloret F., Pham T.T., Cañas J., Reyes D.F., Eon D., Pernot J., Araújo D.
Nanomaterials 8 8 – (2018)
15.-Boron-doping proximity effects on dislocation generation during non-planar MPCVD homoepitaxial diamond growth
Lloret F., Eon D., Bustarret E., Fiori A., Araujo D.
Nanomaterials 8 7 – (2018)
16.-Impact of Nonhomoepitaxial Defects in Depleted Diamond MOS Capacitors
Pham T.T., Pinero J.C., Marechal A., Gutierrez M., Lloret F., Eon D., Gheeraert E., Rouger N., Araujo D., Pernot J.
IEEE Transactions on Electron Devices 65 5 1830-1837 (2018)
17.-High quality Al2O3/(100) oxygen-terminated diamond interface for MOSFETs fabrication
Pham T.T., Gutiérrez M., Masante C., Rouger N., Eon D., Gheeraert E., Araùjo D., Pernot J.
Applied Physics Letters 112 10 – (2018)
18.-Oxygen termination of homoepitaxial diamond surface by ozone and chemical methods: An experimental and theoretical perspective
Navas J., Araujo D., Piñero J.C., Sánchez-Coronilla A., Blanco E., Villar P., Alcántara R., Montserrat J., Florentin M., Eon D., Pernot J.
Applied Surface Science 433 None 408-418 (2018)
19.-Microwave Permittivity of Trace sp 2 Carbon Impurities in Sub-Micron Diamond Powders
Cuenca J.A., Thomas E.L.H., Mandal S., Morgan D.J., Lloret F., Araujo D., Williams O.A., Porch A.
ACS Omega 3 2 2183-2192 (2018)
20.-Silicon (001) heteroepitaxy on 3C-SiC(001)/Si(001) seed
Yeghoyan T., Alassaad K., McMitchell S.R.C., Gutierrez M., Souliere V., Araujo D., Ferro G.
Materials Science Forum 924 MSF None 128-131 (2018)
2017
21.-MPCVD Diamond Lateral Growth Through Microterraces to Reduce Threading Dislocations Density
Lloret F., Gutierrez M., Araujo D., Eon D., Bustarret E.
Physica Status Solidi (A) Applications and Materials Science 214 11 – (2017)
22.-Impact of Thermal Treatments in Crystalline Reconstruction and Electrical Properties of Diamond Ohmic Contacts Created by Boron Ion Implantation
Piñero J.C., Villar M.P., Araujo D., Montserrat J., Antúnez B., Godignon P.
Physica Status Solidi (A) Applications and Materials Science 214 11 – (2017)
23.-Solid solution strengthening in GaSb/GaAs: A mode to reduce the TD density through Be-doping
Gutiérrez M., Araujo D., Jurczak P., Wu J., Liu H.
Applied Physics Letters 110 9 – (2017)
24.-Twins and strain relaxation in zinc-blende GaAs nanowires grown on silicon
Piñero J.C., Araújo D., Pastore C.E., Gutierrez M., Frigeri C., Benali A., Lelièvre J.F., Gendry M.
Applied Surface Science 395 None 195-199 (2017)
25.-Atomic composition of WC/ and Zr/O-terminated diamond Schottky interfaces close to ideality
Piñero J.C., Araújo D., Fiori A., Traoré A., Villar M.P., Eon D., Muret P., Pernot J., Teraji T.
Applied Surface Science 395 None 200-207 (2017)
2016
26.-Influence of methane concentration on MPCVD overgrowth of 100-oriented etched diamond substrates
Lloret F., Araujo D., Eon D., del Pilar Villar M., Gonzalez-Leal J.-M., Bustarret E.
Physica Status Solidi (A) Applications and Materials Science 213 10 2570-2574 (2016)
27.-Stratigraphy of a diamond epitaxial three-dimensional overgrowth using doping superlattices
Lloret F., Fiori A., Araujo D., Eon D., Villar M.P., Bustarret E.
Applied Physics Letters 108 18 – (2016)
2015
28.-Potential barrier heights at metal on oxygen-terminated diamond interfaces
Muret P., Traoré A., Maréchal A., Eon D., Pernot J., Piñero J.C., Villar M.P., Araujo D.
Journal of Applied Physics 118 20 – (2015)
29.-Si NWs conversion to Si-SiC core-shell NWs by MBE
Lloret F., Araujo D., Villar M.P., Liu L., Zekentes K.
Materials Science Forum 821-823 None 965-969 (2015)
30.-TEM study of defects versus growth orientations in heavily boron-doped diamond
Lloret F., Araujo D., Alegre M.P., Gonzalez-Leal J.M., Villar M.P., Eon D., Bustarret E.
Physica Status Solidi (A) Applications and Materials Science 212 11 2468-2473 (2015)
2014
31.-Critical boron-doping levels for generation of dislocations in synthetic diamond
Alegre M.P., Araújo D., Fiori A., Pinero J.C., Lloret F., Villar M.P., Achatz P., Chicot G., Bustarret E., Jomard F.
Applied Physics Letters 105 17 – (2014)
32.-Heteroepitaxial CVD growth of 3C-SiC on diamond substrate
Soulière V., Vo-Ha A., Carole D., Tallaire A., Brinza O., Pinero J.C., Araujo D., Ferro G.
Materials Science Forum 778-780 None 226-229 (2014)
33.-Metal-oxide-diamond interface investigation by TEM: Toward MOS and Schottky power device behavior
Piñero J.C., Araujo D., Traoré A., Chicot G., Maréchal A., Muret P., Alegre M.P., Villar M.P., Pernot J.
Physica Status Solidi (A) Applications and Materials Science 211 10 2367-2371 (2014)
34.-3C-SiC seeded growth on diamond substrate by VLS transport
Vo-Ha A., Rebaud M., Carole D., Lazar M., Tallaire A., Soulière V., Pinero J.C., Araujo D., Ferro G.
Materials Science Forum 778-780 None 234-237 (2014)
35.-Diamond as substrate for 3C-SiC growth: A TEM study
Lloret F., Piñero J., Araujo D., Villar M.P., Gheeraert E., Vo-Ha A., Soulière V., Rebaud M., Carole D., Ferro G.
Physica Status Solidi (A) Applications and Materials Science 211 10 2302-2306 (2014)
36.-Electronic and physico-chemical properties of nanometric boron delta-doped diamond structures
Chicot G., Fiori A., Volpe P.N., Tran Thi T.N., Gerbedoen J.C., Bousquet J., Alegre M.P., Piñero J.C., Araújo D., Jomard F., Soltani A., De Jaeger J.C., Morse J., Härtwig J., Tranchant N., Mer-Calfati C., Arnault J.C., Delahaye J., Grenet T., Eon D., Omnès F., Pernot J., Bustarret E.
Journal of Applied Physics 116 8 – (2014)
2013
37.-Boron concentration profiling by high angle annular dark field-scanning transmission electron microscopy in homoepitaxial ?-doped diamond layers
Araújo D., Alegre M.P., Piñero J.C., Fiori A., Bustarret E., Jomard F.
Applied Physics Letters 103 4 – (2013)
38.-Diamond underlayer microstructure effect on the orientation of AlN piezoelectric layers for high frequency SAW resonators by TEM
Lloret F., Araújo D., Villar M.P., Rodríguez-Madrid J.G., Iriarte G.F., Williams O.A., Calle F.
Microelectronic Engineering 112 None 193-197 (2013)
39.-Quantification of In x Ga 1-x P composition modulation by nanometric scale HAADF simulations
Pastore C.E., Gutiérrez M., Araújo D., Rodríguez-Messmer E.
Applied Surface Science 269 None 138-142 (2013)
2012
40.-Multi-technique analysis of high quality HPHT diamond crystal
Fernández-Lorenzo C., Araújo D., González-Mañas M., Martín J., Navas J., Alcántara R., Villar M.P., Bagriantsev D.
Journal of Crystal Growth 353 1 115-119 (2012)
41.-Optimization of AlN thin layers on diamond substrates for high frequency SAW resonators
Rodríguez-Madrid J.G., Iriarte G.F., Araujo D., Villar M.P., Williams O.A., Müller-Sebert W., Calle F.
Materials Letters 66 1 339-342 (2012)
2011
42.-Fabrication of high frequency SAW resonators using AlN/Diamond/Si technology
Iriarte G.F., Rodríguez J.G., Ro R., Lee R., Williams O.A., Araujo D., Villar M.P., Calle F.
IEEE International Ultrasonics Symposium, IUS None None 573-576 (2011)
43.-Cross sectional evaluation of boron doping and defect distribution in homoepitaxial diamond layers
Araújo D., Paz Alegre M.A., García A.J., Pilar Villar M., Bustarret E., Achatz P., Volpe P.N., Omnès F.
Physica Status Solidi (C) Current Topics in Solid State Physics 8 4 1366-1370 (2011)
44.-Influence of the substrate type on CVD grown homoepitaxial diamond layer quality by cross sectional TEM and CL analysis
Araújo D., Alegre M.P., García A.J., Navas J., Villar M.P., Bustarret E., Volpe P.N., Omnès F.
Diamond and Related Materials 20 3 428-432 (2011)
45.-Sputter optimization of AlN on diamond substrates for high frequency SAW resonators
Rodríguez J.G., Iriarte G.F., Calle F., Araujo D., Villar M.P., Williams O.A.
Proceedings of the 8th Spanish Conference on Electron Devices, CDE’2011 None None – (2011)
2010
46.-TEM study of superconducting polycrystalline diamond
Alegre M.P., Villar M.P., Araújo D., Bustarret E., Capron T., Williams O.A.
AIP Conference Proceedings 1292 None 133-136 (2010)
47.-Spatially correlated microstructure and superconductivity in polycrystalline boron-doped diamond
Dahlem F., Achatz P., Williams O.A., Araujo D., Bustarret E., Courtois H.
Physical Review B – Condensed Matter and Materials Physics 82 3 – (2010)
48.-Composition modulation analysis of In x Ga 1-x P layers grown on (0 0 1) germanium substrates
Pastore C.E., Araújo D., Gutiérrez M., Miguel-Sánchez J., Rodríguez-Messmer E.
Applied Surface Science 256 18 5681-5683 (2010)
49.-Local boron doping quantification in homoepitaxial diamond structures
Araújo D., Achatz P., El Bouayadi R., García A.J., Alegre M.P., Villar M.P., Jomard F., Bustarret E.
Diamond and Related Materials 19 07-sep 972-975 (2010)
50.-Hydrogen passivation of boron acceptors in as-grown boron-doped CVD diamond epilayers
Fernández-Lorenzo C., Araújo D., Martín J., Alcántara R., Navas J., Villar M.P., Alegre M.P., Volpe P.N., Omnès F., Bustarret E.
Diamond and Related Materials 19 07-sep 904-907 (2010)
51.-Mechanism of phase separation generation in ge-based solar cell tunnel junctions
Gutiérrez M., Pastore C.E., Araújo D., Miguel-Sánchez J., Rodríguez-Messmer E.
Journal of Nanoscience and Nanotechnology 10 2 1166-1170 (2010)
2009
52.-InAs/GaAs quantum dots morphology: Nanometric scale HAADF simulations
Araújo D., El Bouayadi R., Gutiérrez M., Pastore C.E., Hopkinson M.
Materials Science and Engineering B: Solid-State Materials for Advanced Technology 165 01-feb 88-93 (2009)
53.-A microstructural study of superconductive nanocrystalline diamond
Villar M.P., Alegre Ma.P., Araujo D., Bustarret E., Achatz P., Saminadayar L., Bauerle C., Williams O.A.
Physica Status Solidi (A) Applications and Materials Science 206 9 1986-1990 (2009)
2007
54.-Electro-optical characterisation for the control of silicon nanocrystals embedded in SiNx:H films
Lelièvre J.-F., Rodriguez H., Fourmond E., Quoizola S., Lipinski M., Araujo D., Bremond G., Lemiti M.
Physica Status Solidi (C) Current Topics in Solid State Physics 4 4 1554-1559 (2007)
55.-Evidence of intrinsic silicon nanostructure formation in SiN matrix deposited by various low temperature CVD techniques
Lelièvre J.-F., Rodriguez H., Fourmond E., Quoizola S., De La Torre J., Sibai A., Bremond G., Ribeyron P.-J., Loretz J.-C., Araujo D., Lemiti M.
Physica Status Solidi (C) Current Topics in Solid State Physics 4 4 1401-1405 (2007)
2006
56.-Structural characterization of InN quantum dots grown by Metalorganic Vapour Phase Epitaxy
Lozano J.G., Gonzalez D., Sánchez A.M., Araujo D., Ruffenach S., Briot O., García R.
Physica Status Solidi (C) Current Topics in Solid State Physics 3 None 1687-1690 (2006)
57.-Correlation of optical and photoluminescence properties in amorphous SiNx:H thin films deposited by PECVD or UVCVD
Lelièvre J.-F., De la Torre J., Kaminski A., Bremond G., Lemiti M., El Bouayadi R., Araujo D., Epicier T., Monna R., Pirot M., Ribeyron P.-J., Jaussaud C.
Thin Solid Films 511-512 None 103-107 (2006)
2005
58.-Planar defects, voids and their relationship in 3C-SiC layers
Méndez D., Aouni A., Araújo D., Ferro G., Monteil Y., Bustarret E.
Materials Science Forum 483-485 None 189-192 (2005)
59.-Analysis of SiC islands formation during first steps of Si carbonization process
Méndez D., Aouni A., Araújo D., Bustarret E., Ferro G., Monteil Y.
Materials Science Forum 483-485 None 555-558 (2005)
60.-Nucleation of InN quantum dots on GaN by metalorganic vapor phase epitaxy
Lozano J.G., Sánchez A.M., García R., González D., Araújo D., Ruffenach S., Briot O.
Applied Physics Letters 87 26 1-3 (2005)
61.-Excitonic emission and N- And B-incorporation in homoepitaxial CVD-grown diamond investigated by cathodoluminescence
Araujo D., Kadri M., Wade M., Bustarret E., Deneuville A.
Physica Status Solidi C: Conferences 2 4 1336-1341 (2005)
62.-Effect of oxygen on the cathodoluminescence signal from excitons, impurities and structural defects in homoepitaxial (100) diamond films
Kadri M., Araujo D., Wade M., Deneuville A., Bustarret E.
Diamond and Related Materials 14 03-jul 566-569 (2005)
63.-Defect morphology and strain of CVD grown 3C-SiC layers: Effect of the carbonization process
Méndez D., Aouni A., Morales F.M., Pacheco F.J., Araújo D., Bustarret E., Ferro G., Monteil Y.
Physica Status Solidi (A) Applications and Materials Science 202 4 561-565 (2005)
64.-Study of isolated cubic GaN quantum dots by low-temperature cathodoluminescence
Garayt J.P., Gérard J.M., Enjalbert F., Ferlazzo L., Founta S., Martinez-Guerrero E., Rol F., Araujo D., Cox R., Daudin B., Gayral B., Si Dang L., Mariette H.
Physica E: Low-Dimensional Systems and Nanostructures 26 01-abr 203-206 (2005)
2004
65.-Transmission Electron Microscopy study of SiC layers obtained by carbonization of Si wafers [Estudio por microscopía electrónica y espectroscopía de infra-rojos de capas de SiC obtenidas mediante carburización de obleas de Si]
Morales F.M., Ramírez J., Fernández C., Barbadillo L., Piqueras J., Araújo D., Molina S.I., García R.
Boletin de la Sociedad Espanola de Ceramica y Vidrio 43 2 363-366 (2004)
66.-Carbon Fiber Reinforced Polymers (CFRP) Nd:YAG laser machining
García A.J., Villar M.P., Araújo D., García-Motolinia J.F., Ribera E., Díez C., López-Gascón C., Estepa C., Peña J.I., García R.
ICALEO 2004 – 23rd International Congress on Applications of Laser and Electro-Optics, Congress Proceedings None None – (2004)
67.-Influence of the Ge coverage prior to carbonization on the structure of SiC grown on Si(111)
Morales F.M., Zgheib Ch., Molina S.I., Araújo D., García R., Fernández C., Sanz-Hervás A., Masri P., Weih P., Stauden Th., Ambacher O., Pezoldt J.
Materials Science Forum 457-460 I 297-300 (2004)
68.-Interfacial strain and defects in Si (001) carbonisation layers for 3C-SiC hetero-epitaxy
Bustarret E., Araújo D., Méndez D., Morales F.M., Pacheco F.J., Molina S.I., Rochat N., Ferro G., Monteil Y.
Materials Science Forum 457-460 I 277-280 (2004)
69.-Excitons and defects in homoepitaxial diamond films from cathodoluminescence of p-/p+ samples
Wade M., Kadri M., Bustarret E., Deneuville A., Muret P., Araujo D.
Physica Status Solidi (A) Applied Research 201 11 2457-2461 (2004)
70.-Homoepitaxial {111}-oriented diamond pn junctions grown on B-doped Ib synthetic diamond
Tajani A., Tavares C., Wade M., Baron C., Gheeraert E., Bustarret E., Koizumi S., Araujo D.
Physica Status Solidi (A) Applied Research 201 11 2462-2466 (2004)
71.-Structural study of micro and nanotubes synthesized by rapid thermal chemical vapor deposition
Morales F.M., Méndez D., Ben T., Molina S.I., Araújo D., García R.
Microchimica Acta 145 01-abr 129-132 (2004)
72.-The role of Ge predeposition temperature in the MBE epitaxy of SiC on silicon
Morales F.M., Zgheib Ch., Molina S.I., Araújo D., García R., Fernández C., Sanz-Hervás A., Masri P., Weih P., Stauden Th., Cimalla V., Ambacher O., Pezoldt J.
Physica Status Solidi C: Conferences 1 2 341-346 (2004)
73.-Study of the phosphorus incorporation in n-doped diamond films by cathodoluminescence
Araujo D., Tajani A., Gheeraert E., Bustarret E.
Journal of Physics Condensed Matter 16 2 S287-S292 (2004)
2003
74.-Comparative TEM Investigation of MBE and RTCVD Conversion of Si into SiC
Morales F.M., Molina S.I., Araújo D., Cimalla V., Pezoldt J.
Materials Science Forum 433-436 None 285-288 (2003)
75.-Structural Study of GaN Layers Grown on Carbonized Si(111) Substrates
Morales F.M., Ponce A., Molina S.I., Araújo D., García R., Ristic J., Sánchez-García M.-A., Calleja E., Cimalla V., Pezoldt J.
Materials Science Forum 433-436 None 1003-1006 (2003)
76.-Microstructural study of CO 2 laser machined heat affected zone of 2024 aluminum alloy
Araújo D., Carpio F.J., Méndez D., García A.J., Villar M.P., García R., Jiménez D., Rubio L.
Applied Surface Science 208-209 1 210-217 (2003)
77.-Fatigue behaviour of laser machined 2024 T3 aeronautic aluminium alloy
Carpio F.J., Araújo D., Pacheco F.J., Méndez D., García A.J., Villar M.P., García R., Jiménez D., Rubio L.
Applied Surface Science 208-209 1 194-198 (2003)
78.-Transmission electron microscopy study of simultaneous high-dose C+ + N+ co-implantation into (1 1 1)Si
Morales F.M., Molina S.I., Ponce A., Araújo D., García R., Barbadillo L., Cervera M., Piqueras J.
Thin Solid Films 426 01-feb 16-30 (2003)
79.-SiC voids, mosaic microstructure and dislocations distribution in Si carbonized layers
Morales F.M., Molina S.I., Araújo D., García R., Cimalla V., Pezoldt J.
Diamond and Related Materials 12 03-jul 1227-1230 (2003)
80.-Transmission electron microscopy study of ultra-thin SiC layers obtained by rapid thermal carbonization of Si wafers
Morales F.M., Molina S.I., Araújo D., Cimalla V., Pezoldt J., Barbadillo L., Hernández M.J., Piqueras J.
Physica Status Solidi (A) Applied Research 195 1 SPEC 116-121 (2003)
2001
81.-Structural characterization of high-dose C++N+ ion-implanted (1 1 1) Si
Barbadillo L., Hernández M.J., Cervera M., Rodríguez P., Piqueras J., Molina S.I., Morales F.M., Araújo D.
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 184 3 361-370 (2001)
82.-Radiation response of n-type base InP solar cells
Walters R.J., Messenger S.R., Summers G.P., Romero M.J., Al-Jassim M.M., Araújo D., Garcia R.
Journal of Applied Physics 90 7 3558-3565 (2001)
83.-Electron beam induced current and cathodoluminescence study of proton irradiated InAsxP1-x/InP quantum-well solar cells
Walters R.J., Summers G.P., Messenger S.R., Romero M.J., Al-Jassim M.M., Garcia R., Araujo D., Freundlich A., Newman F., Vilela M.F.
Journal of Applied Physics 90 6 2840-2846 (2001)
84.-SiC thin films obtained by Si carbonization
Molina S.I., Morales F.M., Araújo D.
Materials Science and Engineering B: Solid-State Materials for Advanced Technology 80 01-mar 342-344 (2001)
85.-Proton-induced damage in p+-n InP solar cells: The role of electron capture at high fluences
Romero M.J., Walters R.J., Araújo D., Messenger S.R., Summers G.P., Hoffman Jr. R.W., García R.
Materials Science and Engineering B: Solid-State Materials for Advanced Technology 80 01-mar 294-298 (2001)
2000
86.-Control of phase modulation in InGaAs epilayers
González D., Aragón G., Araújo D., García R.
Applied Physics Letters 76 22 3236-3238 (2000)
87.-Electron beam induced current and cathodoluminescence study of proton irradiated quantum-well solar cells
Walters R.J., Summers G.P., Messenger S.R., Romero M.J., Araújo D., García R., Freundlich A., Newman F., Vilela M.F.
Conference Record of the IEEE Photovoltaic Specialists Conference 2000-January None 1312-1315 (2000)
1999
88.-Multiple quantum well GaAs/AlGaAs solar cells: Transport and recombination properties by means of EBIC and cathodoluminescence
Araújo D., Romero M.J., Morier-Genoud F., García R.
Materials Science and Engineering B: Solid-State Materials for Advanced Technology 66 1 151-156 (1999)
89.-Failure analysis of heavily proton irradiated p+-n InGaP solar cells by EBIC and cathodoluminescence
Romero M.J., Walters R.J., Araújo D., García R.
Materials Science and Engineering B: Solid-State Materials for Advanced Technology 66 1 189-193 (1999)
90.-Detailed defect study in proton irradiated InP/Si solar cells
Walters R.J., Romero M.J., Araújo D., García R., Messenger S.R., Summers G.P.
Journal of Applied Physics 86 7 3584-3589 (1999)
91.-Spatial distribution of radiation-induced defects in p+-n InGaP solar cells
Romero M.J., Araújo D., García R., Walters R.J., Summers G.P., Messenger S.R.
Applied Physics Letters 74 25 3812-3814 (1999)
92.-Growth rate and critical temperatures to avoid the modulation of composition of InGaAs epitaxial layers
González D., Aragón G., Araújo D., De Castro M.J., García R.
Applied Physics Letters 74 18 2649-2651 (1999)
93.-Radiation-induced order-disorder transition in p+-n InGaP solar cells
Romero M.J., Araújo D., García R., Walters R.J., Summers G.P., Messenger S.R.
Applied Physics Letters 74 18 2684-2686 (1999)
94.-Effect of In-content on the misfit dislocation interaction in InGaAs/GaAs layers
González D., Aragón G., Araújo D., García R.
Thin Solid Films 343-344 01-feb 302-304 (1999)
95.-Piezoelectric InGaAs/GaAs (111)B multiple quantum well photodiodes: Optoelectronic properties by electron beam induced current and cathodoluminescence
Romero M.J., Araújo D., Sánchez-Rojas J.L., Calleja E., Muñoz E., García R.
Microelectronics Journal 30 4 413-417 (1999)
96.-Electron microscopy study of SiC obtained by the carbonization of Si(111)
Pacheco F.J., Sánchez A.M., Molina S.I., Araújo D., Devrajan J., Steckl A.J., García R.
Thin Solid Films 343-344 01-feb 305-308 (1999)
97.-Transmission electron microscopy study of InGaAs/InP superlattices grown on V-shaped surface InP substrates
Molina S.I., Araujo D., Rojas T.C., Garcia R., Morier-Genoud F., Marti U., Reinhart F.K.
Applied Surface Science 144-145 None 488-491 (1999)
1998
98.-Critical thickness for the saturation state of strain relaxation in the InGaAs/GaAs systems
González D., Araújo D., Aragón G., García R.
Applied Physics Letters 72 15 1875-1877 (1998)
99.-Cathodoluminescence study of heavily proton irradiated heteroepitaxial n+-p InP/Si solar cells
Romero M.J., Walters R.J., Araújo D., Garcia R.
Solid State Phenomena 63-64 None 497-508 (1998)
100.-Failure analysis of neutron-irradiated MQW InGaAsP/InP lasers by EBIC
Romero M.J., Araújo D., Gill K., Vasey F., Garcia R.
Solid State Phenomena 63-64 None 443-456 (1998)
101.-Characterisation by TEM and X-ray diffraction of linearly graded composition InGaAs buffer layers on (001) GaAs
Pacheco F.J., Araújo D., Molina S.I., García R., Sacedón A., González-Sanz F., Calleja E., Kidd P., Lourenço M.A.
Materials Science and Technology 14 12 1273-1278 (1998)
102.-Influence of interface dislocations on surface kinetics during epitaxial growth of InGaAs
Álvarez A.L., Calle F., Valtueña J.F., Faura J., Sánchez M.A., Calleja E., Muñoz E., Morante J.R., González D., Araujo D., García Roja R.
Applied Surface Science 123-124 None 303-307 (1998)
1997
103.-A work-hardening based model of the strain relief in multilayer graded-buffer structures
González D., Araújo D., Aragón G., García R.
Applied Physics Letters 71 21 3099-3101 (1997)
104.-Work-hardening effects in the lattice relaxation of single lay er heterostructures
González D., Araújo D., Aragón G., Garcia R.
Applied Physics Letters 71 17 2475-2477 (1997)
105.-EBIC mode characterization of transport properties on laser heterostructures
Romero M.J., Araújo D., Lambkin J.D., García R.
Materials Science and Engineering B 44 01-mar 57-60 (1997)
106.-Advantages of thin interfaces in step-graded buffer structures
González D., Araújo D., González L., González Y., Aragón G., García R.
Materials Science and Engineering B 44 01-mar 41-45 (1997)
1996
107.-Energy-loss dependence of inelastic interactions between high-energy electrons and semiconductors: A model to determine the spatial distribution of electron-hole pairs generation
Romero M.J., Araújo D., García R.
Materials Science and Engineering B 42 01-mar 168-171 (1996)
108.-SCH laser recombination rate from EBIC profiles
Romero M.J., Araújo D., García R.
Materials Science and Engineering B 42 01-mar 172-175 (1996)
109.-Cathodoluminescence study of the spatial distribution of electron-hole pairs generated by an electron beam in Al0.4Ga0.6As
Bonard J.-M., Ganière J.-D., Akamatsu B., Araújo D., Reinhart F.-K.
Journal of Applied Physics 79 11 8693-8703 (1996)
1995
110.-Design of InGaAs linear graded buffer structures
Sacedón A., González-Sanz F., Calleja E., Muñoz E., Molina S.I., Pacheco F.J., Araújo D., García R., Lourenço M., Yang Z., Kidd P., Dunstan D.
Applied Physics Letters None None 3334- (1995)
111.-Dislocation behavior in InGaAs step- and alternating step-graded structures: Design rules for buffer fabrication
Araújo D., González D., García R., Sacedón A., Calleja E.
Applied Physics Letters 67 None 3632- (1995)
1994
112.-Comparison of the lateral carrier transport between a GaAs single quantum well and the AlGaAs barrier during cathodoluminescence excitation
Araújo D., Oelgart G., Ganière J.-D., Reinhart F.K.
Journal of Applied Physics 76 1 342-346 (1994)
113.-One-step growth of buried heterostructures by chemical beam epitaxy over patterned InP substrates
Rudra A., Sugiura H., Ling J., Bonard J.M., Ganière J.D., de Fays M., Araujo D., Ilegems M.
Journal of Crystal Growth 136 01-abr 173-178 (1994)
114.-Step-graded buffer layer study of the strain relaxation by transmission electron microscopy
González D., Araújo D., Molina S.I., Sacedón A., Calleja E., García R.
Materials Science and Engineering B 28 01-mar 497-501 (1994)
115.-Determination of the lateral distribution of electron-hole pairs generated by an electron beam in Al0.4Ga0.6As by cathodoluminescence
Araújo D., Bonard J.-M., Oelgart G., Ganière J.-D., Morier-Genoud F., Reinhart F.-K.
Materials Science and Engineering B 24 01-mar 124-129 (1994)
116.-Transmission electron microscopy study of InxGa1-xAs/GaAs multilayer buffer structures used as dislocation filters
González D., Araújo D., Sacedón A., Calleja E., Molina S.I., Aragón G., García R.
Materials Science and Engineering B 28 01-mar 515-519 (1994)
117.-Strain relief in linearly graded composition buffer layers: A design scheme to grow dislocation-free (<10 5 cm -2 ) and unstrained epilayers
Molina S.I., Pacheco F.J., Araújo D., García R., Sacedón A., Calleja E., Yang Z., Kidd P.
Applied Physics Letters 65 19 2460-2462 (1994)
1993
118.-Lateral transport in GaAs/AlGaAs quantum wells
Araújo D., Oelgart G., Ganière J.-D., Reinhart F.K.
Applied Physics Letters 62 23 2992-2994 (1993)
119.-Cathodoluminescence and photoluminescence studies of dislocations in GaAs/AlGaAs quantum wells
Araújo D., Oelgart G., Ganière J.-D., Reinhart F.K.
Journal of Applied Physics 74 3 1997-2003 (1993)
120.-Chemical beam epitaxy of InP, InGaAs and InGaAsP on non-planar InP substrates
Sugiura H., Rudra A., Carlin J.F., Buhlmann H.J., Araujo D., Ilegems M.
Semiconductor Science and Technology 8 6 1063-1068 (1993)
121.-Self-interstitial mechanism for Zn diffusion-induced disordering of GaAs/AlxGa1-xAs (x=0.1-1) multiple-quantum-well structures
Ky N.H., Ganière J.D., Gailhanou M., Blanchard B., Pavesi L., Burri G., Araújo D., Reinhart F.K.
Journal of Applied Physics 73 8 3769-3781 (1993)
122.-One step growth of buried heterostructures on non-planar InP substrates using chemical beam epitaxy
Sugiura H., Rudra A., Carlin J.F., Araujo D., Ling J., Ilegems M.
1993 IEEE 5th International Conference on Indium Phosphide and Related Materials None None 179-182 (1993)
1992
128.-Luminescence peculiarities on (AlGa)As single quantum well
Oelgart G., Lehmann L., Araújo D., Ganière J.D., Reinhart F.K.
Journal of Applied Physics 71 3 1552-1554 (1992)
129.-Low?Temperature EBIC Study of Zn?Diffused GaAs p?n Junctions
Araújo D., Pavesi L., Ky N.H., Ganière J.?D., Reinhart F.K.
physica status solidi (a) 129 2 555-567 (1992)
1991
130.-Cathodoluminescence study of oval defects on QW structures
Araujo D., Ganiere J.-D., Houdre R., Reinhart F.K.
Institute of Physics Conference Series None 117 703-706 (1991)
131.-Thermal conversion of n-type GaAs:Si to p type in excess arsenic vapor
Ky N.H., Pavesi L., Araújo D., Ganière J.D., Reinhart F.K.
Journal of Applied Physics 70 7 3887-3891 (1991)
132.-A model for the zn diffusion in gaas by a photoluminescence study
Ky N.H., Pavesi L., Araújo D., Ganière J.D., Reinhart F.K.
Journal of Applied Physics 69 11 7585-7593 (1991)
133.-Zinc diffusion in GaAs and zinc-induced disordering of GaAs/AlGaAs multiple quantum wells: a multitechnique study
Pavesi L., Araujo D., Ky N.H., Ganiére J.D., Reinhart F.K., Buffat P.A., Burri G.
Optical and Quantum Electronics 23 7 S789-S804 (1991)
Scope: Universidad de Cádiz
Heads: Fernando Manuel Lloret Vieira, Daniel Araújo Gay Number of researchers: 4
Finantial Entity: Universidad de Cádiz
Ref: FEDER-UCA18-107851
Start date: 01/04/2020 Duration of project: 3 años Total amount: 152500
Scope: Universidad de Cádiz
Heads: Daniel, Araújo Number of researchers: 2
Finantial Entity: Universidad de Cádiz
Ref: FEDER-UCA-18-106470
Star date: 01/04/2020 Duration of project: 1 año Total amount: 45587,71
Scope of the project: Autonómico
Heads: Daniel Araújo Number of researchers: 6
Finantinal entity: Consejería de Economía y Conocimiento. Junta de Andalucía
Ref: FEDER-UCA18-106470
Start date: 03/12/2019 duration of the project: 2 años Total amount: 55161,13
Scope: Autonómica
Heads: Fernado Lloret, Daniel Araújo Number of researchers: 7
Finantial entity: Consejería de Economía y Conocimiento. Junta de Andalucía
Start date: 03/12/2019 Duration of project: 3 años Total amount: 184525,00
Scope of the project: National
Heads: DANIEL ARAÚJO GAY; MARIA DEL PILAR VILLAR CASTRO Number of researchers: 6
Financial Entity: MINISTERIO DE ECONOMÍA, INDUSTRIA Y COMPETITIVIDAD
Ref: TEC2017-86347-C2-1-R
Start date: 01/01/2018 Duration of the project: 1095 days Total amount: 156.090
Number of researchers: 1
Financial Entity: Ministerio de Ciencia, Innovación y Universidades
Ref: ESP201791820
Start date: 26/09/2016
Number of researchers: 1
Financial Entity: European Union
Ref: UNCA15-CE3256
Start date: 01/01/2016
Duration of the project: 730 days
Scope of the project: Others
Heads: DANIEL ARAÚJO GAY
Number of researchers: 6
Financial Entity: European Union
Ref: SEP-2010-039524
Start date: 01/05/2015 Duration of the project: 1460 days
Total amount: 220.000
Scope of the project: National
Heads: DANIEL ARAÚJO GAY
Number of researchers: 5
Financial Entity: Spanish State
Ref: TEC 2014-54357-C2-2-R
Start date: 01/01/2015 Duration of the project: 1095 days
Total amount: 150.645
Scope of the project: Regional
Heads: DANIEL ARAÚJO GAY
Number of researchers: 1
Financial Entity: UNIVERSIDAD DE CÁDIZ – VICERRECTORADO DE INVESTIGACIÓN Y
TRANSFERENCIA
Ref: AT2014-005
Start date: 17/07/2014
Total amount: 2.000
Scope of the project: National
Heads: DANIEL ARAÚJO GAY
Number of researchers: 8
Ref: TEC2009-11399/TEC
Start date: 01/01/2010
Duration of the project: 1095 days
Total amount: 217.800
Position held: Researcher
Number of researchers: 1
Financial Entity: Region de Rhone des Alpes
Ref: 09 011019 01
Start date: 20/10/2009
Scope of the project: Regional
Heads: DANIEL ARAÚJO GAY
Number of researchers: 10
Ref: P07-TEP-02732
Start date: 19/12/2007 Duration of the project: 1462 days
Total amount: 307.668
Heads: DANIEL ARAÚJO GAY
Number of researchers: 2
Financial Entity: Acción Integrada hispano-francesa. Ministerio de Educación y Ciencia
Ref: SAB2006-0101
Start date: 01/09/2007
Duration of the project: 365 days
Scope of the project: National
Heads: DANIEL ARAÚJO GAY
Number of researchers: 1
Financial Entity: Ministerio de Educación y Ciencia
Ref: MAT2006-26589-E
Start date: 14/05/2006
Duration of the project: 596 days – 1 hora
Total amount: 6.000
Scope of the project: Regional
Position held: Researcher
Heads: RAFAEL GARCIA ROJA
Number of researchers: 15
Ref: TEP-383
Start date: 01/01/2006
Duration of the project: 1095 days
Total amount: 135.000
Scope of the project: National
Position held: Researcher
Heads: SERGIO IGNACIO MOLINA RUBIO
Number of researchers: 6
Ref: TEC2005-05781-CO3-02/MIC
Start date: 31/12/2005
Duration of the project: 1096 days
Total amount: 132.209
Position held: Researcher
Heads: MARIA DEL PILAR VILLAR CASTRO
Number of researchers: 4
Ref: CIT-370200-2005-13
Start date: 01/01/2005 Duration of the project: 364 days
Total amount: 72.000
Scope of the project: European Union
Position held: Researcher
Heads: SERGIO IGNACIO MOLINA RUBIO
Number of researchers: 14
Ref: NOE 500101-2 SANDIE
Start date: 01/04/2004
Duration of the project: 1460 days
Total amount: 375.000
Scope of the project: Regional
Heads: DANIEL ARAÚJO GAY
Number of researchers: 1
Ref: ATT-10-2003
Start date: 30/01/2004
Duration of the project: 336 days
Total amount: 10.500
Scope of the project: National
Heads: DANIEL ARAÚJO GAY
Number of researchers: 4
Financial Entity: Ministerio de industria , CDTI. Ministerio de Industria, Turismo y Comercio
Ref: FIT-370200-2004-88
Start date: 01/01/2004 Duration of the project: 365 days Total amount: 154.500
Scope of the project: European Union
Position held: Researcher
Heads: SERGIO IGNACIO MOLINA RUBIO
Number of researchers: 5
Ref: HA 2003-0118
Start date: 01/01/2004
Duration of the project: 730 days
Total amount: 10.608
Heads: DANIEL ARAÚJO GAY
Number of researchers: 4
Ref: FIT-100100-2003-1
Start date: 24/09/2003
Total amount: 177.840
Scope of the project: National
Heads: DANIEL ARAÚJO GAY
Number of researchers: 1
Ref: PU2003-PR-01
Start date: 18/07/2003
Total amount: 590,3
Scope of the project: National
Position held: Researcher
Heads: SERGIO IGNACIO MOLINA RUBIO
Number of researchers: 5
Financial Entity: Ministerio de Educación y Ciencia
Ref: MAT 2001-5188-E
Start date: 11/06/2003 Duration of the project: 365 days Total amount: 1.750
Scope of the project: National
Heads: DANIEL ARAÚJO GAY; SERGIO IGNACIO MOLINA RUBIO
Number of researchers: 6
Ref: MAT98-0823-C03-02
Start date: 01/12/1998
Duration of the project: 1095 days
Total amount: 69.116,38
Scope of the project: National
Position held: Researcher
Heads: RAFAEL GARCIA ROJA
Number of researchers: 5
Financial Entity: Ministerio de ciencia y tecnología
Ref: MAT 94-0538
Start date: 01/05/1994 Duration of the project: 1340 days – 1 hora
Total amount: 54.692
Financial Entity: LA COMUNIDAD EUROPEA, PROGRAMA ESPRIT., ENTIDADES
Participants: UPM, CNM, UCA, UNIV. LIVERPOOL, UNIV. SURVEY, NMRC
Scope of the project: European Union
Position held: Researcher
Heads: RAFAEL GARCIA ROJA
Number of researchers: 4
Ref: REF. ESPRIT 6854
Start date: 01/07/1992
Duration of the project: 1094 days
Total amount: 180.303,6
Theses directed
University: Universidad de Cádiz, FIDAM
PhD Student: Josué Millán
Lecture Date: 2021
University: Universidad de Cádiz, Université Grenoble Alpes
PhD Student: Beatriz Soto
Lecture Date: 2020
University: Universidad de Cádiz, Université Grenoble Alpes
PhD Student: Fernando Lloret Vieira
Lecture Date: 2017
University: Universidad de Cádiz
PhD Student: José Carlos Piñero Charlo
Lecture Date: 2016
University: Universidad de Cádiz
PhD Student: Enzo, Carlo
Lecture Date: 2014
University: Universidad de Cádiz
PhD Student: Maria de la Paz
Lecture date: 2015
University: Escuela doctoral Universidad de Cádiz
PhD Student: Dery Torres Uriona
Calification: Cum Laude
Lecture Date: 2012
University: Universidad de Cádiz
PhD Student: Antonio J. García Fuentes
Lecture Date: 2006
University: Universidad de Cádiz
PhD Student: Manuel Jesús Romero Florez
Lecture Date: 2000
Curriculum Vitae
1982-1987: Studies of Physics at the University of Lausanne
1988-1992: PhD studies at the Swiss Federal Institute of Technology in Lausanne (EPFL: Ecole Polytechnique Fédérale de Lausanne, Switzerland)
1992-1992: Docteur es Science - Swiss Federal Institute of Technology in Lausanne (EPFL)
1986-87: Master work (12 months), Département de Physique, Université de Lausanne
1987-88: Investigator at NESTLÉ S.A. (NESTEC RESEARCH CENTER, Vers Chez les Blancs, Lausanne, Switzerland)
1988-92: PhD at the Swiss Federal Institute of Technology in Lausanne (EPFL: Ecole Polytechnique Fédérale de Lausanne, Switzerland)
1992 -92: Postdoctoral position at IBM Research laboratory in Rüschlikon (Zürich, Switzerland) with the doctors Heinrich Röhrer and Santos Alvarado
1993-95: Postdoctoral position at University of Cadiz (Spain)
1995-04: Associate professor and senior lecturer at University of Cadiz (Spain) of Materials Science and Engineering
2004-07: Full Professor at Lyon Institute of Technology (INSA-Lyon - Institut National des Sciences Appliquées, France) of Applied Physics (section 28)
2007-19: Reader and Full Professor at University of Cadiz (Spain) of Materials Science and Engineering
- HISTORICAL RESEARCH FIELDS: Aerospace materials, Diamond epitaxy, structural and functional characterization, Power Devices (Diamond, SiC), semiconductors III-V, metallurgy
- ACTUAL RESEARCH FIELDS: Aerospace materials, Diamond epitaxy, structural and functional characterization (TEM, CL, XPS, I/V, C/V, …)
- SUPERVISION PhD STUDENTS: 12 (2000-2019)
- HEAD OF PROJECTS:
- Aerospace materials: 3 industrial contracts, 1 regional project, 1 national project
- Diamond epitaxy: 3 national projects, 1 H2020
- Power Devices (Diamond, SiC): 4 national projects
- INVITED/PLENARY CONFERENCES: Diamond and Related Materials (Elsevier), E-MRS, EXMATEC, BIAMS, CIMTEC, French-Japanese Diamond Power Device Workshop, German-Japanese-Spanish Joint Workshop on Frontier Photonic and Electronic Materials and Devices
- MANAGEMENT RESPONSIBLE: CLYM (Lyon electron microscopy facilities center: INSA, ECL, ENS, Univ. Claude Bernard), MULTI-D Regional Platform (regional structural characterization facilities: Lyon-Grenoble-St Etienne) included in the MACODEV regional I+D cluster
- WORKSHOP ORGANIZATION: E-MRS symposiums, EXMATEC, International Advisory Board Comitee in the NDNC (Japan 2020)
- REFEREEING JOURNALS: Nanomaterials, Applied Physics Letters, Diamond and Related Materials (Elsevier), Physica Status Solidi, Materials Sciences Engineering, Proc., Materials Science Proceedings…
- REFEREEING AGENCIES: Agence Nationale de la Recherche (ANR, France), MICINN-MINECO (Spain), AVAP (Spain)
- REFEREEING PhD DISSERTATIONS:
- France: Université de Versailles-St Quentin, Université Grenoble-Alpes, Ecole Centrale de Lyon, INSA-Lyon
- Belgium: University of Hasselt, IMEC
- Spain: Universidad de Cádiz, Universidad Politécnica de Madrid, Universidad de Valencia, Universidad Pública de Navarra, Universidad de Valladolid
- REFEREEING UNIVERSITY POSITIONS: Universidad de Cádiz, Universidad Politécnica de Calaluña, Universidad de Sevilla, Universidad Pública de Navarra, Universidad de Valliadolid
- Scientific contributions: publications in JCR journals: 137, congress and worshops: 193, I+D competitive projects: 25
1988-1992: Seminars/exercises of Physique Générale (mechanics, thermodynamics) at the Swiss Federal Institute of Technology in Lausanne (EPFL: Ecole Polytechnique Fédérale de Lausanne, Switzerland)
1995-2004: Maximum responsible for the subject:
Theory/seminars/exercises/Laboratory/experimental of Materials Science and Engineering at University of Cadiz (Spain)2004-2007: Maximum responsible for the subject:
Theory and seminar/exercises of Physique Générale (mechanics, waves and optics) INSA-Lyon, Lyon Institute of Technology (Institut National des Sciences Appliquées, France) of Applied Physics (section 28)2007-2019: Maximum responsible for the Subject:Theory /seminar/exercises, Laboratory/experimental and theory of Materials Science and Engineering at University of Cadiz (Spain)
French: Mother Tongue
Spanish: Mother Tongue
English: Work language
German: School knowledge level (12 courses)